
No.M16C-54-0004
( 3 / 3 )
Table 4. Differences between M16C/62L (low voltage version) and M16C/62M (low voltage version)
Remarks
SDA output
delay function
in I
2
C mode
(UART2)
Can be selected analog
delay or digital delay
For details refer to
M16C/62A data
sheet.
Analog delay
Memory space
1M byte
Expansion mode 1(1.2Mbyte)
Expansion mode 2(4Mbyte)
Separate CTS/RTS
pins function
of serial I/O
Can be selected None
Mask ROM, Flash memory versions common
1M byte
Flash memory version
Standard serial I/O
mode of flash
memory version
(flash memory
rewrite)
Restrictions
improvement
(flash memory
version)
Being done to improve the
left description
Precautions for external bus
timing (technical news NO.
M16C-24-9905)
Precautions for boot mode
(technical news NO. M16C-
27-9906, M16C-29-9906)
Reduction of
power supply
electric current
(flash memory
version)
Standard value at
f(X
CIN
)=32kHz; 700µA
Standard value at
f(X
CIN
)=32kHz; 45µA
Flash memory
program time
(256K byte)
Standard value; Approximately
8 second
Standard value; Approximately
6 second
Precautions for hysteresis
(technical news NO. M16C-
33-9908)
Synchronous mode
Synchronous mode
UART mode
Operation
voltage/
frequency
characteristics
Vcc=2.7V to 3.6V
( f(X
IN
)=10MHz, No wait)
Vcc=2.4V to 3.6V
( f(X
IN
)=7MHz, No wait)
Vcc=2.2V to 3.6V
( f(X
IN
)=7MHz, 1 wait)
Vcc=2.7V to 3.6V
( f(X
IN
)=10MHz, No wait)
Vcc=2.4V to 3.6V
( f(X
IN
)=7MHz, No wait)
Single-chip mode is supported in
80-pin version.
Memory expansion and
microprocessor modes are not
supported in 80-pin version.
Item
M16C/62L
M16C/62M
M16C/62 group
Program/erase
voltage
(flash memory
version)
Operation voltage
; Vcc=2.4V to 3.6V
Program/erase voltage
; Vcc=2.7V to 3.6V
Operation voltage
; Vcc=2.4V to 3.6V
Program/erase voltage
; Vcc=2.7V to 3.6V
Operation voltage
; Vcc=2.2V to 2.4V
Program/erase voltage
; Vcc=2.7V to 3.4V
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